Dependence of the microstructural and the electrical properties on the annealing temperature and Hg-cell fluxes for in situ annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers-Reference-Cited by-同舟云学术

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Dependence of the microstructural and the electrical properties on the annealing temperature and Hg-cell fluxes for in situ annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Published:2005-08 Issue:1 Volume:122 Page:80-83
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ryu Y.S.,Kang T.W.,Kim T.W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Molecular beam epitaxial growth and characterization of 2‐in.‐diam Hg1−xCdxTe films on GaAs (100) substrates

2. Dislocation reduction in HgCdTe on GaAs by thermal annealing

3. Optical and electrical properties of in situ-annealed p-type Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers for applications as infrared detectors

4. Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications

5. Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructural Characterization of CdTe Surface Passivation Layers;Journal of Electronic Materials;2010-04-02

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