Quantitative analysis of first and second surface layers by LEIS (TOF)
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference29 articles.
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1. TOF-LEIS spectra of Ga/Si: Peak shape analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-12
2. Surface composition analysis by low-energy ion scattering;Surface Science Reports;2007-03-01
3. In situ analysis of Ga-ultrathin films by TOF-LEIS;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
4. Metastable and equilibrium structures onPt3Sn(001)studied by STM, RHEED, LEED, and AES;Physical Review B;1999-07-15
5. Investigation of hydrogen covered crystalline surfaces by low-energy ion-scattering and recoiling spectroscopy;Journal of Nuclear Materials;1997-09
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