High resolution n-type Si surface barrier detectors for measurement of conversion electrons below 20 keV

Author:

Petersen J.L.W.

Publisher

Elsevier BV

Subject

General Engineering

Reference18 articles.

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3. S.C. Pancholi, H. de Waard, A.v.d. Wijk, J.L.W. Petersen and J. van Klinken, Nucl. Instr. and Meth. this issue, p. 577.

4. Dead Layers in Charged-Particle Detectors

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1. Dead layer on silicon p–i–n diode charged-particle detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2014-04

2. Determining the energy response of a silicon surface-barrier detector to incident 3- to 25-keV electrons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-09

3. Silicon detector for low‐energy electron spectroscopy;Review of Scientific Instruments;1990-05

4. Nuclear data sheets for A = 163;Nuclear Data Sheets;1989-02

5. Improvements in 57Fe depth-selective conversion electron Mössbauer spectroscopy by applying a low-noise scintillation electron detector;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-09

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