Range distributions and thermal-annealing properties of low-energy arsenic and indium implants in silicon-Reference-Cited by-同舟云学术

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Range distributions and thermal-annealing properties of low-energy arsenic and indium implants in silicon

Published:1982-09 Issue:2-3 Volume:200 Page:491-497
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Whitlow H.J.,Blood P.,Farmery B.W.,O'Connor D.J.,Shannon J.M.,Thompson M.W.

Publisher

Elsevier BV

Subject

General Engineering

Reference40 articles.

1. Heavy ion ranges in aluminium and silicon

2. Comparison of experimental and theoretical ranges of heavy ions in the low energy region

3. Z1-oscillations in low-energy heavy-ion ranges

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scanning probe microscopy characterisation of masked low energy implanted nanometer structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-02

2. Bulk unipolar camel diodes formed using indium implantation into silicon;IEEE Electron Device Letters;1985-11

3. Some properties of laser annealed shallow As + implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-03

4. On the optimization of VLSI contacts;IEEE Transactions on Electron Devices;1985-03

5. Nanometre structures in semiconductors formed by low energy ion implantation;Vacuum;1984-01

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