Ion channeling study of radiation induced defects in a bent silicon crystal-Reference-Cited by-同舟云学术

Ion channeling study of radiation induced defects in a bent silicon crystal

Published:1983-12 Issue:1-3 Volume:218 Page:669-672
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Wang G.H.,Cong P.J.,Gibson W.M.,Sun C.R.,Kim I.J.,Salman S.,Pisharody M.,Baker S.I.,Carrigan R.A.,Forster J.S.,Mitchell I.V.

Publisher

Elsevier BV

Subject

General Engineering

Reference10 articles.

1. Steering of charged particle trajectories by a bent crystal

2. Bending of high energy beams using axial and planar channeling

3. Possible applications of the steering of charged particles by bent single crystals

4. PhD Thesis;Salman,1982

5. S.I. Baker et al., Phys. Rev., to be published.

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