Infra-red faraday rotation in semiconductors: Double beam phase-sensitive method for the measurement of infra-red Faraday rotation, ellipticity and Voigt effect-Reference-Cited by-同舟云学术

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Infra-red faraday rotation in semiconductors: Double beam phase-sensitive method for the measurement of infra-red Faraday rotation, ellipticity and Voigt effect

Published:1964-03 Issue:1 Volume:4 Page:13-28
ISSN:0020-0891
Container-title:Infrared Physics
language:en
Short-container-title:Infrared Physics

Author:

Pidgeon C.R.,Smith S.D.

Publisher

Elsevier BV

Subject

General Engineering

Reference29 articles.

1. Magnetic Optical Band Gap Effect in InSb

2. Magneto-band Effects in InAs and InSb in dc and High Pulsed Magnetic Fields

3. I. Experimental researches in electricity.—Nineteenth series

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1. Universal detector based on magnetooptical rotation for high-performance liquid chromatography;Analytical Chemistry;1991-03-01

2. Landau Level Spectroscopy: Interband Effects and Faraday Rotation;Landau Level Spectroscopy;1991

3. Interband Faraday rotation in diluted magnetic semiconductors:Zn1−xMnxTe andCd1−xMnxTe;Physical Review B;1986-11-15

4. Electron effective mass determination from intraband Faraday-rotation in silicon;Physica B+C;1977-04

5. Plasma Faraday Rotation in n-Type GaN;physica status solidi (b);1974-08-01

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