Application of infrared reflectivity to the study of the relaxation process of excess carriers in semiconductors-Reference-Cited by-同舟云学术

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Application of infrared reflectivity to the study of the relaxation process of excess carriers in semiconductors

Published:1992-01 Issue:2 Volume:33 Page:127-131
ISSN:0020-0891
Container-title:Infrared Physics
language:en
Short-container-title:Infrared Physics

Author:

Dingrong Qian

Publisher

Elsevier BV

Subject

General Engineering

Reference6 articles.

1. Infrared and Millimeter Wooes, Vol. 8: Electromagnetic Waves in Matter;Perkowitz,1983

2. Dielectric function in HgSe at 2, 95, and 300 K

3. An infrared study on the scattering mechanism in HgSe:Fe

4. Measurement of Free‐Carrier Lifetimes in GaP by Photoinduced Modulation of Infrared Absorption

5. Lifetime measurement in Hg0.7Cd0.3Te by population modulation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of CeO2/TiO2 bilayer nanoparticle coating on ZrO2 fibers for thermal radiation shielding applications;Materials Today Communications;2023-12

2. Infrared Spectra of Photoinduced Species on Hydroxylated Titania Surfaces;The Journal of Physical Chemistry B;2000-10-01

3. Plasma edge and its application to infrared measurement and detection;Journal of Applied Physics;1993-09

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