Characterization of gaas by far infrared reflectivity-Reference-Cited by-同舟云学术

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Characterization of gaas by far infrared reflectivity

Published:1973-11 Issue:4 Volume:13 Page:321-326
ISSN:0020-0891
Container-title:Infrared Physics
language:en
Short-container-title:Infrared Physics

Author:

Perkowitz S.,Breecher J.

Publisher

Elsevier BV

Subject

General Engineering

Reference13 articles.

1. Infrared techniques for semiconductor characterization

2. Far infrared free-carrier absorption in n-type gallium arsenide

3. Coupling of Plasmons to Polar Phonons in Degenerate Semiconductors

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1. Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1−xN films using infrared spectroscopy;Journal of Applied Physics;2013-08-07

2. Model for the unpolarized infrared reflectivity from uniaxial polar materials: Effects of anisotropy, free carriers, and defects;Infrared Physics & Technology;2012-01

3. The classical oscillator model and dielectric constants extracted from infrared reflectivity measurements;Infrared Physics & Technology;2007-07

4. Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C;Physical Review B;2000-08

5. Optical characterization in microelectronics manufacturing;Journal of Research of the National Institute of Standards and Technology;1994-09

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