Millimetric and far-infrared conductivity of p-Si: A case for frequency-dependent carrier relaxation time-Reference-Cited by-同舟云学术

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Millimetric and far-infrared conductivity of p-Si: A case for frequency-dependent carrier relaxation time

Published:1979-12 Issue:6 Volume:19 Page:689-691
ISSN:0020-0891
Container-title:Infrared Physics
language:en
Short-container-title:Infrared Physics

Author:

Gopal Vishnu

Publisher

Elsevier BV

Subject

General Engineering

Reference2 articles.

1. Millimetric and far infrared conductivity of p-Si. Evidence for interband transitions

2. Analysis of the infrared plasma reflectivity spectra of semiconductors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Optical Characterization of Semiconductors;1993

2. Infrared free carrier reflectivity of p-type PbTe;Infrared Physics;1983-07

3. The frequency dependent relaxation time of free carriers in PbSnTe;Infrared Physics;1982-07

4. Effective mass values from plasma reflectivity spectra;Infrared Physics;1981-05

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