Model for infrared detection by a metal-semiconductor phase transition
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference16 articles.
1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature
2. Pressure Dependence of the Resistance of VO2
3. A New Growing Method for VO2 Single Crystals
4. The Phase Transition in VO2
5. Anisotropy of the electrical conductivity of VO2 single crystals
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ultra-thin perfect absorber employing a tunable phase change material;Applied Physics Letters;2012-11-26
2. Treating the Case of Incurable Hysteresis in VO2;Future Trends in Microelectronics;2010-08-18
3. Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging;Journal of Applied Physics;2009-11-15
4. Chapter 3 Monolithic Silicon Microbolometer Arrays;Uncooled Infrared Imaging Arrays and Systems;1997
5. Recent advances in optical and infrared detector technology;Topics in Applied Physics;1980
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