Hot-wall epitaxial growth of Pb1−xSnxTe hetero-layers for infrared diode laser devices
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference31 articles.
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2. Invited: IV-VI Narrow Gap Semiconductors and Devices
3. SPONTANEOUS AND LASER EMISSION FROM Pb1−xSnxTe DIODES PREPARED BY Sb DIFFUSION
4. Cd‐diffused Pb1−xSnxTe lasers with high output power
5. LONG‐WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERS
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1. Doping of Zn3P2thin films during growth using the hot wall deposition technique and some properties of the grown films;Semiconductor Science and Technology;1989-07-01
2. Reflection high‐energy electron diffraction intensity oscillations in IV‐VI compound semiconductors;Applied Physics Letters;1988-09-05
3. Intrinsic infrared detectors;Progress in Quantum Electronics;1988-01
4. TEM analysis of lead telluride films grown by hot-wall epitaxy on KCI and BaF2;Journal of Crystal Growth;1987-01
5. Preparation and properties of epitaxial films of indium-doped lead tin telluride;Thin Solid Films;1984-12
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