Analyse de la decroissance du photo-courant dans Hg0.7Cd0.3Te entre 4,2 et 300k
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference19 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recombination and ionization in narrow gap semiconductors;Physics Reports;1995-06
2. Influence of SiO2 surface passivation on carrier lifetimes in n-type Hg0.7Cd0.3Te;Journal of Materials Science: Materials in Electronics;1994-02
3. Lifetime in compensated p-cdxHg1?xTe (x ?0.3) crystals with deep acceptors;Soviet Physics Journal;1988-02
4. Carrier recombination in p-Hg0.8Cd0.2Te and n-Hg0.7Cd0.3Te;Journal of Crystal Growth;1988-01
5. Differentiation of low temperature recombination processes between x=0.3 and x=0.2 Hg1-xCdxTe alloys;Journal of Crystal Growth;1982-09
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