Effect of relaxation time anisotropy on free carrier dispersion studies of semiconductors
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference14 articles.
1. Optical Properties of Semiconductors, A Semiconductor Monograph;Moss,1959
2. Analysis of the infrared plasma reflectivity spectra of semiconductors
3. Optical Properties of Semiconductors, A Semiconductor Monograph;Moss,1959
4. High-Stress Piezoresistance and Mobility in Degenerate Sb-Doped Germanium
5. Magnetoresistance in Heavily Dopedn-Type Silicon
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of the infrared plasma reflectivity minimum by a self-consistent method;Infrared Physics;1985-07
2. Infrared free carrier reflectivity of p-type PbTe;Infrared Physics;1983-07
3. Effective mass values from plasma reflectivity spectra;Infrared Physics;1981-05
4. Variation of optical dielectric constant with carrier concentration: PbSnTe;Infrared Physics;1980-05
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