Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser deposition
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference13 articles.
1. Group III nitride semiconductors for short wavelength light-emitting devices
2. Growth of AIN thin films on (111) and (100) silicon by pulsed laser deposition in nitrogen plasma ambient
3. Formation of cubic-AlN layer on MgO(100) substrate
4. Epitaxial growth of cubic AlN films on (100) and (111) silicon by pulsed laser ablation
5. Stabilization of Cubic AlN in Epitaxial AlN/TiN Superlattices
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2. Mechanical and Tribological Properties of NbAl, NbAlN, and NbAIN-CH Coatings Deposited using Various Niobium Target Currents and Acetylene Flow Rates;Journal of Materials Engineering and Performance;2022-01-20
3. Investigation on gallium nitride with N-vacancy defect nano-grinding by molecular dynamics;Journal of Manufacturing Processes;2020-09
4. Structural modification and bandgap tunning of cubic AlN thin film by carbon ions irradiations;Optical and Quantum Electronics;2019-08
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