Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces-Reference-Cited by-同舟云学术

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Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces

Published:2000-10 Issue:1-4 Volume:166 Page:72-76
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Pinc̆ı́k E,Jergel M,Kuc̆era M,van Swaaij R.A.C.M.M,Ivanc̆o J,Senderák R,Zeman M,Müllerová J,Brunel M

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference5 articles.

1. R.L. Layberry, C.G. Pearce, A.S. Bunting, J.L. Sullivan, in: R. Pick (Ed.), ESCAMPIG 96, ECA of EPS, p. 495.

2. The influence of the inductively-coupled hydrogen plasma on the GaAs surface properties

3. Low temperature plasma anodic oxidation of silicon through thin aluminium overlayers

4. Plasma Diagnostics,1968

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs;Physica B: Condensed Matter;2010-05

2. Photoreflectance study of plasma-etched semi-insulating GaAs substrates treated;Bulletin of the Russian Academy of Sciences: Physics;2008-07

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