Role of In(4×1) superstructure on the heteroepitaxy of InSb on Si(111) substrate-Reference-Cited by-同舟云学术

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Role of In(4×1) superstructure on the heteroepitaxy of InSb on Si(111) substrate

Published:2000-08 Issue: Volume:162-163 Page:263-269
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Rao B.V,Okamoto T,Shinmura A,Gruznev D,Tambo T,Tatsuyama C

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. Measurement of Growth Kinetics in a Heteroepitaxial System: Pb on Cu(100)

2. B.V. Rao, D. Gruznev, T. Tambo, C. Tatsuyama, J. Appl. Phys. (in press).

3. Interface formation and growth of InSb on Si(100)

4. In(4× 3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si(001) Substrate

5. The role of (4×3) surface reconstruction induced by In adsorption for the heteroepitaxial growth of InSb on Si(001)-2×1 surface

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reaction of Sb on In/Si(111) surfaces: Heteroepitaxial InSb(111) formation;Surface Science;2015-11

2. Sb on In/Si(111) processes with dynamically observable LEEM, selected area LEED and chemically analyzed SR-XPEEM;Surface and Interface Analysis;2006

3. Effect of In(4×1) Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111) Substrate;Japanese Journal of Applied Physics;2000-07-15

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