X-ray emission spectroscopic studies of silicon precipitation in surface layer of SiO2 induced by argon excimer laser irradiation-Reference-Cited by-同舟云学术

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X-ray emission spectroscopic studies of silicon precipitation in surface layer of SiO2 induced by argon excimer laser irradiation

Published:1998-04 Issue:1-2 Volume:126 Page:83-91
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kurosawa K,Herman P.R,Kurmaev E.Z,Shamin S.N,Galakhov V.R,Takigawa Y,Yokotani A,Kameyama A,Sasaki W

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Superconductivity in bulk and thin films ofLa1.85Sr0.15CuO4−δandBa2YCu3O7−δ

2. Formation of artificial BaTiO3/SrTiO3superlattices using pulsed laser deposition and their dielectric properties

3. Surface alterations of SiO2 optics by 9.8 and 8.5 eV laser photons

4. Silicon precipitation in a surface layer of SiO2 by high-power vacuum ultraviolet laser irradiation

5. Radiation effects of vacuum ultraviolet lasers in amorphous Si3N4 films

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3. Responses of organic and inorganic materials to intense EUV radiation from laser-produced plasmas;SPIE Proceedings;2013-05-09

4. Silica ablation process induced by focused laser plasma soft x-rays;SPIE Proceedings;2011-11-23

5. Silica nano-ablation using laser plasma soft x-rays;SPIE Proceedings;2009-05-07

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