Nucleation and growth of nanocrystalline silicon studied by TEM, XPS and ESR-Reference-Cited by-同舟云学术

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Nucleation and growth of nanocrystalline silicon studied by TEM, XPS and ESR

Published:2003-06 Issue:1-4 Volume:216 Page:376-381
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sato Keisuke,Izumi Tomio,Iwase Mitsuo,Show Yoshiyuki,Morisaki Hiroshi,Yaguchi Toshie,Kamino Takeo

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Stable and efficient electroluminescence from a porous silicon‐based bipolar device

2. Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode

3. Visible light-emitting devices with Schottky contacts on an ultrathin amorphous silicon layer containing silicon nanocrystals

4. Size classification of Si nanoparticles formed by pulsed laser ablation in helium background gas

5. Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO[sub 2] layers

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3. Rearrangement of the optical properties of a-SiOx: H films after crystallization of silicon nanoclusters;Journal of Non-Crystalline Solids;2021-11

4. Advanced nanocrystallinity with widened optical gap realized via microstructural control in P-doped silicon oxide thin films used as window layer in nc-Si solar cells;Materials Chemistry and Physics;2020-03

5. Shedding light on the aqueous synthesis of silicon nanoparticles by reduction of silanes with citrates;Faraday Discussions;2020

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