Twist-bonded compliant substrates for III–V semiconductors heteroepitaxy
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference12 articles.
1. New approach to grow pseudomorphic structures over the critical thickness
2. Compliant substrates: a review on the concept, techniques and mechanisms
3. Compliant substrate technology: Integration of mismatched materials for opto-electronic applications
4. Lattice engineered compliant substrate for defect-free heteroepitaxial growth
5. Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices
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1. Phase transformation of Ni/Si thin films induced by nanoindentation and annealing;Applied Physics A;2010-05-06
2. TEM-nanoindentation studies of semiconducting structures;Micron;2007-06
3. Misfit dislocations in nanocomposites with quantum dots, nanowires and their ensembles;Advances in Physics;2006-11
4. Probing Interface Structure of Low-Temperature-Bonded InP on Si;Electrochemical and Solid-State Letters;2005-05-01
5. Vickers indentation of thin GaAs (001) samples;Philosophical Magazine;2004-10-21
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