Determination of the outward relaxation of cleaved strained InAs structures by scanning tunneling microscopy-Reference-Cited by-同舟云学术

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Determination of the outward relaxation of cleaved strained InAs structures by scanning tunneling microscopy

Published:2002-05 Issue:1-4 Volume:190 Page:258-263
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Bruls D.M.,Koenraad P.M.,Hopkinson M.,Wolter J.H.,Salemink H.W.M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Imaging the Wave-Function Amplitudes in Cleaved Semiconductor Quantum Boxes

2. Cross-sectional STM study of InAs quantum dots for laser devices

3. Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition

4. Recent developments in scanning tunneling spectroscopy of semiconductor surfaces

5. Cross-sectional scanning tunnelling microscopy of III-V semiconductor structures

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1. Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots;Nanomaterials;2021-01-03

2. Scanning tunneling microscopy contrast of isovalent impurities on the GaAs (110) surface explained with a geometrical model;Physical Review B;2016-01-27

3. Structure of CoO(001) surface from DFT+U calculations;Surface Science;2014-03

4. Semiconductors Studied by Cross-sectional Scanning Tunneling Microscopy;Scanning Probe Microscopy in Nanoscience and Nanotechnology 2;2010-11-15

5. InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008

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