SiCN thin film prepared at room temperature by r.f. reactive sputtering-Reference-Cited by-同舟云学术

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SiCN thin film prepared at room temperature by r.f. reactive sputtering

Published:2002-01 Issue:3-4 Volume:185 Page:262-266
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wu X.C,Cai R.Q,Yan P.X,Liu W.M,Tian J

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Preparation of amorphous Si3N4-C plate by chemical vapour deposition

2. Gas evolution studies for structural characterization of hexamethyldisilazane‐baseda‐Si:C:N:H films

3. Hybridization between Si3N4 and SiC films by plasma CVD

4. Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide

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