Oxygen-ion-induced ripple formation on silicon: evidence for phase separation and tentative model
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference12 articles.
1. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment
2. Artifacts in low-energy depth profiling using oxygen primary ion beams: Dependence on impact angle and oxygen flooding conditions
3. A mechanism of surface micro-roughening by ion bombardment
4. Y. Saito, Statistical Physics of Crystal Growth, World Scientific, Singapore, 1996.
5. Dynamic Scaling of Ion-Sputtered Surfaces
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