The effect of Se and Zn pre-deposition on thermal diffusion of elements across the ZnSe/GaAs interface studied by SIMS-Reference-Cited by-同舟云学术

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The effect of Se and Zn pre-deposition on thermal diffusion of elements across the ZnSe/GaAs interface studied by SIMS

Published:2003-01 Issue: Volume:203-204 Page:490-494
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Gard F.S.,Riley J.D.,Dowsett M.G.,Prince K.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference4 articles.

1. Novel beryllium containing II–VI compounds: basic properties and potential applications

2. Persistent sourcing of coherent spins for multifunctional semiconductor spintronics

3. Studies in the growth of ZnSe on GaAs(001)

4. ZnSe/GaAs Heterointerface Stabilization by High-Temperature Se Treatment of GaAs Surface

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1. A strategy to eliminate selenium oxide islands formed on the ZnSe/GaAs epilayer;Materials Science in Semiconductor Processing;2024-05

2. Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source;Semiconductors;2009-11

3. Observation of oxygen contamination at ZnSe/GaAs interfaces using SIMS;Applied Surface Science;2006-03

4. MOVPE growth and study of ZnCdSe/ZnSSe MQW structures for green VCSELs;physica status solidi (c);2006-03

5. Analytical Atomic Spectrometry for Nuclear Forensics;Applied Spectroscopy Reviews;2005-08

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