Silicon isotope fractionation during FZ growth of silicon crystals-Reference-Cited by-同舟云学术

Silicon isotope fractionation during FZ growth of silicon crystals

Published:2003-01 Issue: Volume:203-204 Page:802-805
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Morishita Y.,Satoh H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference4 articles.

1. Y. Morishita, N.T. Kita, S. Togashi, Secondary Ion Mass Spectrometry, SIMS XII, Elsevier, Amsterdam, 2000, p. 1003.

2. Y. Morishita, A. Sasaki, N.T. Kita, S. Togashi, Secondary Ion Mass Spectrometry, SIMS XI, Wiley, New York, 1998, p. 67.

3. Letter to the Editor: New values for silicon reference materials, certified for isotope abundance ratios

4. K. Fujii, M. Tanaka, Y. Nezu, K. Nakayama, H. Fujimoto, P. De Bièvre, S. Valkiers, Abstracts of the 17th Japan Symposium on Thermophysical Properties, 1996, p. 291.

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