Direct determination of p/n junction depth by the emission of matrix complex ions-Reference-Cited by-同舟云学术

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Direct determination of p/n junction depth by the emission of matrix complex ions

Published:2003-01 Issue: Volume:203-204 Page:520-522
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Alexandrov O.V.,Kazantsev D.Yu.,Kovarsky A.P.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference3 articles.

1. P.R. Boudewijn, H.W. Werner, in: A. Benninghoven, R.J. Colton, D.S. Simons, H.W. Werner (Eds.), Secondary Ion Mass Spectrometry (SIMSV), Springer Series in Chem. Phys., Vol. 44, Springer, Berlin, 1986, pp. 270–278.

2. Electrical and structural properties ofp‐njunctions in cw laser annealed silicon

3. Sputter depth profiling of surface potentials in silicon semiconductors

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