Sb or Cs covered InAs(110) surfaces: moving EF into conduction band and quantized 2D electron channel-Reference-Cited by-同舟云学术

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Sb or Cs covered InAs(110) surfaces: moving EF into conduction band and quantized 2D electron channel

Published:1996-09 Issue: Volume:104-105 Page:73-78
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Aristov V.Yu.,Grehk M.,Zhilin V.M.,Taleb-Ibrahimi A.,Indlekofer G.,Hurych Z.,Le Lay G.,Soukiassian P.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference36 articles.

1. Giant band bending induced by Ag on InAs(110) surfaces at low temperature

2. Electron Spectroscopy Study of Noble Metal (Au, Cu, Ag)-InAs(110) Interfaces at 10-300 K

3. Anomalous pinning of the Fermi level at the InAs(110)-Cu interface obtained at 10 K

4. Cs-induced highest EF jump above InAs(110) conduction-band minimum

5. Alkali-Metal-Induced Highest Fermi-Level Pinning Position above Semiconductor Conduction Band Minimum

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Potassium and ion beam induced electron accumulation in InN;Surface Science;2015-02

2. Correlated development of a (2 × 2) reconstruction and a charge accumulation layer on the InAs(111)–Bi surface;Surface Science;2011-01

3. Electronic structure of bismuth terminated InAs(100);Surface Science;2009-01

4. Creation of a metallic channel at theSn∕InAs(111)Bsurface studied using synchrotron-radiation photoelectron spectroscopy;Physical Review B;2006-11-03

5. Adsorption of Cs on InAs(111) surfaces;Applied Surface Science;2006-05

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