Occupation site and distribution of δ-doped Er in InP measured by X-ray CTR scattering-Reference-Cited by-同舟云学术

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Occupation site and distribution of δ-doped Er in InP measured by X-ray CTR scattering

Published:1997-06 Issue: Volume:117-118 Page:785-789
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Fujita K.,Tsuchiya J.,Ichiki S.,Hamamatsu H.,Matsumoto N.,Tabuchi M.,Fujiwara Y.,Takeda Y.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference6 articles.

1. Defects in Semiconductors;Fujiwara,1995

2. Atomic configuration of the Er‐O luminescence center in Er‐doped GaAs with oxygen codoping

3. X‐ray crystal truncation rod scattering measurement of AsH3‐exposed InP/InPAs/InP single heterostructures

4. Group-V atoms exchange due to exposure of InP surface to AsH3(+PH3) revealed by x-ray CTR scattering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of newly developed X-ray diffractometer equipped with Johansson monochromator;IOP Conference Series: Materials Science and Engineering;2011-09-19

2. Buried Heterostructure of Nitride Semiconductors Revealed by Laboratory Level X-ray CTR Scattering;Transactions of the Materials Research Society of Japan;2008

3. Study on Buried Interfaces in Semiconductor Heterostructures by X-ray Reflectivity;Transactions of the Materials Research Society of Japan;2007

4. PHOTOCURRENT STUDY OF ERBIUM DELTA-DOPED InP GROWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY;International Journal of Modern Physics B;2002-11-20

5. X-ray CTR scattering and interference for atomic-scale characterization of semiconductor heterostructures;Journal of Crystal Growth;2002-04

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