1. The solution of over-erase problem controlling poly-Si grain size;Muramatsu;IEDM Tech. Dig.,1994
2. Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness;Naruke;IEDM Tech. Dig.,1988
3. Limitations on oxide thickness in FLASH EEPROM applications;Runnion,1996
4. A reliable bi-polarity write/erase technology in FLASH EEPROMs;Aritome;IEDM Tech. Dig.,1990
5. Stress-induced low-level leakage mechanism in ultrathin silicon dioxide films caused by neutral oxide trap generation;Kimura,1994