In situ investigations of the metal-compound semiconductor interaction by mass spectrometry and electrical resistance measurements

Author:

Szigethy D.,Mojzes I.,Sebestyen T.

Publisher

Elsevier BV

Subject

Spectroscopy

Reference30 articles.

1. A review of the theory and technology for ohmic contacts to Group III–V compound semiconductors;Rideout;Solid-State Electron.,1975

2. In situ measurements of arsenic losses during annealing of the usual evaporated contacts of GaAs Gunn diodes;Sebestyen;Electron. Lett,1976

3. Study of the arsenic and phosphorus losses during annealing of metal contacts on GaAs and GaP;Szigethy;Proc. 7th Int. Vac. Congr. and the 3rd Int. Conf. on Solid Surfaces, Vienna,1977

4. Dissociation of GaAs and GaA1As during alloying of gold contact films;Kinsbron;Solid-State Electron.,1979

5. An evolved gas analysis system;Gallagher;Thermochim. Acta,1978

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