Hall effect and electrical resistivity in CeRhSb
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Gap Formation in a Valence Fluctuation System of CeNiSn
2. Evidence of pseudogap formation in a new valence-fluctuating compound: CeRhSb
3. Coherence Kondo gap in CeNiSn and CeRhSb
4. Transport and Thermal Properties of f-Electron Systems;Kurisu,1993
5. Pressure dependence of the Hall effect in single crystals of CeNiSn
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