CrSi2 films synthesized by high current Cr ion implantation and their physical properties
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference21 articles.
1. Ion beam synthesis of buried CrSi2 layers
2. Thermal expansion studies of the group IV‐VII transition‐metal disilicides
3. An investigation of the optical constants and band gap of chromium disilicide
4. Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer
5. Phase formation in Cr‐Si thin‐film interactions
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1. Origin of enhanced thermoelectric properties of doped CrSi2;RSC Adv.;2014
2. Very heavily electron-doped CrSi2as a high-performance high-temperature thermoelectric material;New Journal of Physics;2012-03-30
3. Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique;Materials Science in Semiconductor Processing;2010-12
4. Morphological and structural characterizations of CrSi2 nanometric films deposited by laser ablation;Applied Surface Science;2007-12
5. Surface morphology and the phase formation at Cr/Si system;Applied Surface Science;2007-03
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