Porous silicon as a potentiometric transducer for ion detection: effect of the porosity on the sensor response-Reference-Cited by-同舟云学术

Porous silicon as a potentiometric transducer for ion detection: effect of the porosity on the sensor response

Published:2001-03 Issue:3-4 Volume:172 Page:225-234
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zairi S.,Martelet C.,Jaffrezic-Renault N.,Lamartine R.,M’gaı̈eth R.,Maaref H.,Gamoudi M.,Guillaud G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

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2. Crystalline quality of silicon layer formed by FIPOS technology

3. L.T. Canham, La recherche (Magazine) No. 259, Vol. 24, 1993, p. 1228.

4. Investigations of porous silicon for vapor sensing

5. Ion-sensitive field-effect transistors with ultrathin Langmuir-Blodgett membranes

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