MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor-Reference-Cited by-同舟云学术

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MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor

Published:2000-06 Issue: Volume:159-160 Page:318-327
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Féron O,Sugiyama M,Asawamethapant W,Futakuchi N,Feurprier Y,Nakano Y,Shimogaki Y

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference5 articles.

1. Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopy

2. In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry

3. Surface processes during growth of GaAs by MOCVD

4. In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorption

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1. Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity;Electronics;2024-05-29

2. Design Optimization of Gas Distribution System for Large‐Scale Capacity GaAs‐MOCVD;Crystal Research and Technology;2023-10-10

3. Improvement of InGaP solar cells grown with TBP in planetary MOVPE reactor;Solar Energy Materials and Solar Cells;2023-08

4. High-Speed MOVPE Growth of InGaP Solar Cells;IEEE Journal of Photovoltaics;2020-03

5. A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE;Technical Physics Letters;2017-10

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