Realization of crack-free and high-quality thick AlxGa1−xN for UV optoelectronics using low-temperature interlayer-Reference-Cited by-同舟云学术

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Realization of crack-free and high-quality thick AlxGa1−xN for UV optoelectronics using low-temperature interlayer

Published:2000-06 Issue: Volume:159-160 Page:405-413
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Iwaya Motoaki,Terao Shinji,Hayashi Nobuaki,Kashima Takayuki,Amano Hiroshi,Akasaki Isamu

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

4. Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy

5. K. Itoh, Doctoral Thesis, School of Engineering, Nagoya University, Nagoya, 1991.

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