Controlled formation of metal-semiconductor interface to 2DEG layer by in-situ electrochemical process and its application to in-plane gated electron waveguide devices-Reference-Cited by-同舟云学术

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Controlled formation of metal-semiconductor interface to 2DEG layer by in-situ electrochemical process and its application to in-plane gated electron waveguide devices

Published:1997-06 Issue: Volume:117-118 Page:342-346
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kudoh Takashi,Okada Hiroshi,Hashizume Tamotsu,Hasegawa Hideki

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a NovelIn-SituElectrochemical Process

2. Fabrication and Characterisation of Direct Schottky Contacts to Two-Dimensional Electron Gas in GaAs/AlGaAs Quantum Wells

3. Fabrication and characterization of quantum wire transistors with Schottky in-plane gates formed by an in situ electrochemical process

4. Transport Characterization of Schottky In-Plane Gate Al0.3Ga0.7As/GaAs Quantum Wire Transistors Realized by \twltibIn-Situ Electrochemical Process

5. Quantum transport in a Schottky in-plane-gate controlled GaAs/AlGaAs quantum well wires

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum devices based on III–V compound semiconductors;Physics and Applications of Semiconductor Quantum Structures;2001-01

2. Advanced mesoscopic device concepts and technology;Microelectronic Engineering;2000-06

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