Schottky-barrier formation at passivated surfaces: covalent and ionic semiconductors-Reference-Cited by-同舟云学术

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Schottky-barrier formation at passivated surfaces: covalent and ionic semiconductors

Published:1996-09 Issue: Volume:104-105 Page:183-187
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Saiz-Pardo R.,Rincón R.,de Andrés P.L.,Flores F.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference20 articles.

1. Electronic Structures of Metal-Semiconductor Contacts;Mönch,1990

2. Alkali adsorption on GaAs(110): atomic structure, electronic states and surface dipoles

3. The metal-semiconductor interface: Si (111) and zincblende (110) junctions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of STM images ofNi3Al(001) and (111) surfaces;Physical Review B;2003-09-26

2. LCAO calculations of sulphur interlayers on Ge(001) and Si(001)K interfaces;Applied Surface Science;1998-01

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