High electric field electroluminescence in hydrogenated amorphous silicon carbide alloys-Reference-Cited by-同舟云学术

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High electric field electroluminescence in hydrogenated amorphous silicon carbide alloys

Published:1997-04 Issue: Volume:113-114 Page:504-508
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Toyama Toshihiko,Matsui Tetsuyuki,Okamoto Hiroaki,Hamakawa Yoshihiro

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. An avalanche-mode amorphous Selenium photoconductive layer for use as a camera tube target

2. Hot‐electron‐induced electroluminescence and avalanche multiplication in hydrogenated amorphous silicon

3. Current Topics in Amorphous Materials Physics and Technology;Hamakawa,1993

4. Proc. 16th IEEE Photovoltaic Specialists Conf.;Hamakawa,1982

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical bandgap and quantum well model in hydrogenated amorphous silicon carbon alloy films;physica status solidi (a);2003-01

2. Quantum well model and variation of the optical band gap in hydrogenated amorphous silicon carbon alloy films;Solid State Communications;2001-06

3. Subpicosecond hot carrier cooling in amorphous silicon;Journal of Applied Physics;1998-11

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