In-plane photoconductivity of InAs/GaAs strained-layer structures prepared on variously oriented GaAs substrates-Reference-Cited by-同舟云学术

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In-plane photoconductivity of InAs/GaAs strained-layer structures prepared on variously oriented GaAs substrates

Published:1996-11 Issue: Volume:107 Page:233-237
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Shima Takayuki,Yamamoto Eiichi,Kuniyoshi Shigekazu,Kudo Kazuhiro,Tanaka Kuniaki,Kimura Shinji,Obara Akira,Makita Yunosuke

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference10 articles.

1. Possible applications of surface-corrugated quantum thin films to negative-resistance devices

2. Multidimensional quantum well laser and temperature dependence of its threshold current

3. Fabrication and characterization of MBE grown InAs/GaAs strained-layer superlattices on variously oriented substrates

4. Formation of InAs microstructures on variously oriented GaAs substrates

5. Polarization-resolved photoluminescence of InAs/GaAs strained-layer structures on variously oriented substrates

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