Electrical characteristics of a triode with an double thin film/n-Si (n-Si/MoAu/n-Si) structure-Reference-Cited by-同舟云学术

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Electrical characteristics of a triode with an double thin film/n-Si (n-Si/MoAu/n-Si) structure

Published:1997-04 Issue: Volume:113-114 Page:718-721
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Gekka Yasuo,Satoh Kazunori,Nagami Kazuya,Harayama Atsushi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference6 articles.

1. The Transistor, A Semi-Conductor Triode

2. Effect of low temperature annealing on the surface state of a-Si:H films

3. Hot-carrier triodes with thin-film metal base

4. Heterojunctions and Metal-Semiconductor Junctions;Milnes,1967

5. Attenuation Length Measurements of Hot Electrons in Metal Films

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