Ga-induced nano-facet formation on Si(1 1 n) surfaces-Reference-Cited by-同舟云学术

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Ga-induced nano-facet formation on Si(1 1 n) surfaces

Published:2003-05 Issue: Volume:212-213 Page:334-338
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Nakahara H.,Suzuki H.,Miyata S.,Ichimiya A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference10 articles.

1. The structure of silicon surfaces from (001) to (111)

2. Major stable surface of silicon: Si(20 4 23)

3. Structure and Stability ofSi(114)−(2×1)

4. In-situ REM study of Au-induced faceting on Si(113) surface

5. Ga-induced restructuring of Si(112) and Si(337)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of H:Si(113)2×2 Structure by Scanning Tunneling Microscopy and Ab Initio Calculation;e-Journal of Surface Science and Nanotechnology;2010

2. Silver: a novel growth catalyst for Ge nanoislands on Si(113);physica status solidi (RRL) - Rapid Research Letters;2009-10-07

3. From nanoislands to nanowires: Growth of germanium on gallium-terminated silicon surfaces;physica status solidi (a);2009-06-22

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