Author:
Yasui Kanji,Hashiba Masahiro,Akahane Tadashi
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference10 articles.
1. Silicon carbide bipolar transistor
2. H. Fuma, M. Kodama, H. Tadano, S. Sugimoto, M. Takigawa, Technical Report of IEICE, vol. 90, no. 62, 1990, CPM90-20, ED90-26 (in Japanese).
3. IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates
4. Relaxation of interfacial stress and improved quality of heteroepitaxial 3C–SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 °C
5. 3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献