SIMS and high-resolution RBS analysis of ultrathin SiOxNy films-Reference-Cited by-同舟云学术

SIMS and high-resolution RBS analysis of ultrathin SiOxNy films

Published:2003-01 Issue: Volume:203-204 Page:418-422
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kimura K.,Nakajima K.,Kobayashi H.,Miwa S.,Satori K.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference5 articles.

1. S. Miwa, Y. Kudo, S. Kawado, F. Nishiyama, in: P. Bertrand, H.-N. Migeon, H.W. Werner (Eds.), Proceedings of the 12th International Conference on Secondary Ion Mass Spectroscopy, Elsevier, Amsterdam, 2000, p. 465.

2. D.F. Reich, B.W. Schueler, J. Bennett, in: P. Bertrand, H.-N. Migeon, H.W. Werner (Eds.), Proceedings of the 12th International Conference on Secondary Ion Mass Spectroscopy, Elsevier, Amsterdam, 2000, p. 557.

3. Approaching the limit for quantitative SIMS measurement of ultra-thin nitrided SiO2 films

4. Monolayer analysis in Rutherford backscattering spectroscopy

5. Nitrogen Depth Profiling in Ultrathin Silicon Oxynitride Films with High-Resolution Rutherford Backscattering Spectroscopy

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