D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides-Reference-Cited by-同舟云学术

D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides

Published:2003-01 Issue: Volume:203-204 Page:281-284
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Bersani M,Giubertoni D,Barozzi M,EIacob E,Vanzetti L,Anderle M,Lazzeri P,Crivelli B,Zanderigo F

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference9 articles.

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2. Characterization of ultra thin oxynitrides: A general approach

3. E. De Chambost, B. Boyer, B. Rasser, M. Schuhmacher, in: Secondary Ion Mass Spectrometry SIMS XII, Elsevier, Amsterdam, 2000, p. 533.

4. A new secondary ion mass spectrometry technique for III‐V semiconductor compounds using the molecular ions CsM+

5. M. Bersani, M. Fedrizzi, M. Sbetti, M. Anderle, in: Proccedings of the AIP Conference on Characterisation and Metrology for ULSI Technology, Vol. 449, New York, 1998, p. 892.

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