1. A. Van Veen, H. Schut, P. E. Mijinarends, in: P.G. Coleman (Ed.), Positron Beams and their Applications, World Scientific, Singapore, 2000, p. 206.
2. R. Krause-Rehberg, H.S. Leipner, Positron Annihilation in Semiconductors, Springer, Berlin, 1999 (Chapter 2).
3. A. Van Veen, H. Schut, J. de-Varia, R.A. Hakvoort, I.J. Pama, in: P.J. Schultz, G. Massoumi, P.J. Simpson (Eds.), Proceedings of the 4th International Workshop on Slow Positron Beam Techniques for Solids and Surfaces, AIP, New York, 1990, p. 171.
4. Comparison of experimental and theoretical Doppler broadening line-shape parameters
5. Slow and fast positron studies of defects created in silicon by swift Kr ions