Amorphous SiC film formation on Si(100) using electron beam excitation-Reference-Cited by-同舟云学术

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Amorphous SiC film formation on Si(100) using electron beam excitation

Published:1997-12 Issue:3-4 Volume:120 Page:279-286
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Xu Jiazhan,Choyke W.J.,Yates John T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference34 articles.

1. Amorphous/crystalline heterostructure as a novel approach to fabrication of a solar cell

2. Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique

3. SiC mask membrane for synchrotron radiation lithography

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3;Journal of Crystal Growth;2009-09

2. Electron-beam-induced deposition of carbon films on Si(100) using chemisorbed ethylene as a precursor molecule;Surface Science;2004-11

3. Metal/Polymer Interfacial Interactions;Springer Series in Advanced Microelectronics;2003

4. Interaction of polymeric Si:C:H films with copper substrates and with deposited Cu adatoms;Applied Surface Science;2002-02

5. Field-induced growth of a quantum dot from Ge[sub 2]H[sub 6] precursor gas using the scanning tunneling microscope;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001

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