New semiconductors TlInGaP and their gas source MBE growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. New III-V Compound Semiconductors TlInGaP for $\bf 0.9\,{\mbi \mu}m$ to over $\bf 10\,{\mbi \mu}m$ Wavelength Range Laser Diodes and Their First Successful Growth
2. InTlP — a proposed infrared detector material
3. Energy Bands in Semiconductors;Long,1968
4. Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi;Springer Handbook of Electronic and Photonic Materials;2017
2. Ellipsometric studies of AlxGa1−xAs0.5Sb0.5 (0.0 ≤ x ≤ 0.6) alloys lattice-matched to InP(100);Journal of Applied Physics;2014-01-14
3. High-Efficiency III-V Multijunction Solar Cells;Handbook of Photovoltaic Science and Engineering;2011-03-01
4. Tl-Based III-V Alloy Semiconductors;Infrared Detectors and Emitters: Materials and Devices;2001
5. Gas-source MBE growth of Tl-based III–V semiconductors and their Raman scattering characterization;Journal of Crystal Growth;2000-02
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