Growth and characterization of lattice-matched HgSe-Reference-Cited by-同舟云学术

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Growth and characterization of lattice-matched HgSe

Published:1997-05 Issue: Volume:175-176 Page:642-646
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Parthier L.,Wißmann H.,Luther S.,Machel G.,Schmidbauer M.,Köhler R.,von Ortenberg M.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe

2. Semimagnetic semiconductors in high magnetic fields

3. Molecular beam epitaxy of iron-doped HgSe layers

4. MBE Growth of High Mobility HgSe:Fe Layers

5. 3rd Eur. Symp. on X-Ray Topography an High Resolution Diffraction;Wißmann,1996

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rhenium monoselenide: An investigation by density functional theory;physica status solidi (b);2016-02-08

2. Hg based II-VI compounds on non-standard substrates;physica status solidi (a);2012-06-20

3. Growth of Lattice-Matched ZnTeSe Alloys on (100) and (211)B GaSb;Journal of Electronic Materials;2012-03-30

4. Material characteristics of HgCdSe grown on GaSb and ZnTe/Si substrates by MBE;SPIE Proceedings;2011-09-08

5. Study of HgCdSe Material Grown by Molecular Beam Epitaxy;Journal of Electronic Materials;2011-04-19

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