Bridgman growth of compositionally graded InxGa1 − xAs (x = 0.05−0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Theoretical gain of strained quantum well grown on an InGaAs ternary substrate
2. Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layer
3. $\bf In_{0.38}Ga_{0.62}As$/InAlGaAs/InGaP Strained Double Quantum Well Lasers on $\bf In_{0.21}Ga_{0.79}As$ Ternary Substrate
4. K. Nakajima and T. Kusunoki, J. Crystal Growth, to be published.
5. Multicomponent zone melting growth of ternary InGaAs bulk crystal
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