Photoluminescence excitation spectroscopy of GaP1−N alloys: conduction-band-edge formation by nitrogen incorporation-Reference-Cited by-同舟云学术

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Photoluminescence excitation spectroscopy of GaP1−N alloys: conduction-band-edge formation by nitrogen incorporation

Published:1997-01 Issue:1-4 Volume:170 Page:353-356
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yaguchi Hiroyuki,Miyoshi Seiro,Biwa Goshi,Kibune Masaya,Onabe Kentaro,Shiraki Yasuhiro,Ito Ryoichi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content

2. Metalorganic vapor phase epitaxy of GaP1−xNxalloys on GaP

3. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide

4. Stochastic transfer of excitations and exhancement of theNNα-pair luminescence in GaP: N

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A study of the physical properties of GaN, GaP and their mixed ternary alloys for the applications in optoelectronics devices;Bulletin of Materials Science;2023-03-28

2. Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence;physica status solidi (b);2021-09-06

3. Spectroscopy of Nonradiative Recombination Levels by Two‐Wavelength Excited Photoluminescence;physica status solidi (b);2020-11-27

4. Photoluminescence intensity change of GaP1−xNx alloys by laser irradiation;AIP Advances;2020-09-01

5. Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below‐Gap Excitation Light;physica status solidi (b);2019-10-15

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