Growth of and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Dielectric Properties of Reactively Sputtered Films of Aluminum Nitride
2. Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation
3. Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel
4. GaN Growth Using GaN Buffer Layer
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2. An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices;physica status solidi (a);2020-01-13
3. Photonics integrated circuits using Al x Ga1−x N based UVC light-emitting diodes, photodetectors and waveguides;Applied Physics Express;2020-01-08
4. Influence of silicon doping on internal quantum efficiency and threshold of optically pumped deep UV AlGaN quantum well lasers;Semiconductor Science and Technology;2018-11-26
5. UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates;IEEE Photonics Technology Letters;2015-09-15
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